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Applied Physics Letters

Volumn 36, Issue 6, 1980, Pages 447-449

Channeling of implanted phosphorus through polycrystalline silicon

(1) Seidel, T E a

a NONE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21544457755 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.91541 Document Type: Article

Times cited : (9)

References (11)

1
- 84950890664
- (private communication)
- Furnanage, R.A.¹

2
- 0018011483
- (1978) J. Electrochem. Soc , vol.125‐9 , pp. 1499
- Wada, Y.¹ Nishimatsu, S.²

3
- 84950798422
- (1974) J. Appl. Phys , vol.45 , pp. 12
- Blood, P.¹ Dearnaley, G.² Wilkins, M.A.³

4
- 0040486422
- (1978) Appl. Phys. Lett , vol.33 , pp. 775
- Gat, A.¹ Gerzberg, L.² Gibbons, J.F.³ Magee, T.J.⁴ Feng, J.⁵ Hong, J.D.⁶

5
- 84950779625
- (1978) Electrochem. Soc. Abstr , vol.78‐1 , pp. 683
- Weitzel, C.E.¹ Tanguay, D.J.²

6
- 84950863086
- (unpublished)
- Fraser, D.B.¹ Sinha, A.K.² Tretola, A.R.³ Payne, R.S.⁴

7
- 0016943715
- (1976) J. Appl. Phys , vol.47 , pp. 1686
- Ishiwara, H.¹ Furukawa, S.²

8
- 84950892456
- (Academic, New York,) (Gate oxide is continuous over source and drain region at implantation.)
- (1975) Applied Solid State Science , vol.5 , pp. 209
- Pickar, K.A.¹

9
- 84950926022
- (private communication)
- Daniels, P.¹

10
- 0016450811
- (1975) J. Jpn. Soc. Appl. Phys. Suppl , vol.44 , pp. 311
- Ikeda, T.¹ Tamura, M.² Yoshihiro, N.³ Tokuyama, T.⁴

11
- 84950832672
- (1980) J. Electrochem. Soc. (SSST) , vol.206
- Wada, Y.¹ Nishimutsu, S.² Hashimoto, N.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.