Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation

Applied Physics Letters

Volumn 68, Issue 11, 1996, Pages 1552-1554

  Koh, Meishoku ^a   Shigeta, Bungo ^a   Igarashi, Kai ^a   Matsukawa, Takashi ^a   Tanii, Takashi ^a   Mori, Shigetaka ^a   Ohdomari, Iwao ^a  

^a WASEDA UNIVERSITY   (Japan)

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EID: 21544443596     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115696     Document Type: Article

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