Electrical characterization of hole traps in p-type ZnSe and ZnSSe grown by molecular beam epitaxy

Applied Physics Letters

Volumn 72, Issue 23, 1998, Pages 3026-3028

  Seghier, D ^a   Hauksson, I S ^a   Gislason, H P ^a   Brownlie, G D ^b   Prior, K A ^b   Cavenett, B C ^b  

^a UNIVERSITY OF ICELAND   (Iceland)

^b HERIOT WATT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21544441207     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121529     Document Type: Article

References (9)

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