Thermodynamics of energy models of semiconductor devices

ZAMM Zeitschrift fur Angewandte Mathematik und Mechanik

Volumn 76, Issue SUPPL. 2, 1996, Pages 289-292

  Albinus, G ^a  

^a WEIERSTRASS INSTITUTE FOR APPLIED ANALYSIS AND STOCHASTICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21444453719     PISSN: 00442267     EISSN: 15214001     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

1. ALBINUS, G.: Thermodynamic aspects of the energy model of hot carrier transport in semiconductor devices, in Simulation of Semiconductor Devices and Processes. Vol. 4 (Zurich)(W. Fichtner and D. Aemmer, eds.) (1991), 493-498.
2. ALBINUS, G.: Numerical Simulation of the Carrier Transport in Semiconductor Devices on the Base of an Energy Model; in Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices. (R.E. Bank, R. Bulirsch, H. Gajewski, and K. Mertens, eds.); Birkhäuser, Basel 1994, 157-170.
3. GAJEWSKI, H.: Analysis und Numerik des Ladungsträgertransports in Halbleitern; GAMM Mitteilungen 16 (1993), 35-57.
4. GAJEWSKI, H. AND K. GRÖGER: Semiconductor equations for variable mobilities based on Boltzmann statistics or Fermi-Dirac statistics; Math. Nachr. 140 (1989), 7-36.
5. GAJEWSKI, H. AND K. GRÖGER: Initial boundary value problems modelling heterogeneous semiconductor devices; in Teubner-Texte zur Mathematik 117, Leipzig 1990, 4-53.
6. KELLS, K.D. General electrothermal semiconductor device simulation. Hartung-Gorre Verlag, Konstanz 1994.
7. WACHUTKA, G.: Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modelling; in Simulation of Semiconductor Devices and Processes. Vol. 3 (Bologna) (G. Baccarani and M. Rudan, eds.) (1988), 83-95.
8. WACHUTKA, G.: Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modelling; IEEE Trans. CAD 9 (1990),1141-1149.