Structure of spin-split evanescent states in the fundamental gap of zinc-blende-type semiconductors

Journal of Applied Physics

Volumn 97, Issue 8, 2005, Pages

  Richard, Soline ^a   Drouhin, Henri Jean ^b   Rougemaille, Nicolas ^c   Fishman, Guy ^a  

^a UNIV PARIS SUD   (France)

^b LABORATOIRE DES SOLIDES IRRADIÉS   (France)

^c LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAPS; EVANESCENT STATES; SEMICONDUCTOR CRYSTALS; SPIN-SPLIT CONDUCTION BAND;

DISPERSIONS; ELECTRON ENERGY LEVELS; HAMILTONIANS; MAGNETIC FIELDS; PROBABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SOLID STATE DEVICES; VECTORS; ZINC;

SEMICONDUCTOR MATERIALS;

EID: 21444434248     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1876572     Document Type: Article

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