The Structure of Thermomigration Channels in Silicon

Technical Physics Letters

Volumn 30, Issue 3, 2004, Pages 205-207

  Buchin, E Yu ^a   Denisenko, Yu I ^a   Simakin, S G ^a  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 2142808154     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1707168     Document Type: Article

References (9)

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4. V. I. Rudakov and L. A. Koledov, Zarubezhn. Elektron. Tekh., Nos. 3-4, 27 (1993); Nos. 5-6, 25 (1993).
5. V. B. Mochalov and V. I. Rudakov, Prib. Tekh. Éksp., No. 2, 155 (1996).
6. F. F. Red'ko and S. O. Izidinov, Élektrokhimiya 2, 1128 (1966); 2, 1282 (1966); 12, 1494 (1976).
7. F. F. Red'ko and S. O. Izidinov, Élektrokhimiya 2, 1128 (1966); 2, 1282 (1966); 12, 1494 (1976).
8. F. F. Red'ko and S. O. Izidinov, Élektrokhimiya 2, 1128 (1966); 2, 1282 (1966); 12, 1494 (1976).
9. G. A. Wolf and A. I. Mlavski, in Crystal Growth. Theory and Techniques, Ed. by C. Goodman (Plenum, London, 1974; Mir, Moscow, 1977), Vol. 1, pp. 244-296.