Formation of single tips of oxidation-sharpened Si

Applied Physics Letters

Volumn 69, Issue 27, 1996, Pages 4260-4261

  Zhang, Yongxia ^a   Zhang, Yanwei ^a   Sriram, T S ^b   Marcus, R B ^a  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 2142780849     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116964     Document Type: Article

References (8)

1. G. Binnig, C. F. Quate, and Ch. Gerber, Phys. Rev. Lett. 56, 930 (1986).
2. T. R. Albrecht, S. Akamine, T. E. Carver, and C. F. Quate. J. Vac. Sci. Technol. A 8, 3386 (1990).
3. R. B. Marcus, T. S. Ravi, T. Gmitter, K. Chin, D. Liu, W. J. Orvis. D. R. Ciarlo, C. E. Hunt, and J. Trujillo, Appl. Phys. Lett. 56, 236 (1990).
4. T. S. Ravi, R. B. Marcus, and D. Liu, J. Vac. Sci. Technol. B 9, 2733 (1991).
5. J. Brugger, R. A. Buser, and N. F. de Rooij, Sens. Actuators A 34, 193 (1992).
6. M. Wendman, Digital Instruments, Inc. (private communication).
7. A. S. Grove, Physics and Technology of Semiconductor Devices (Wiley, New York, 1967), pp. 23-31.
8. D. M. Kao, J. P. McVittie, W. D. Nix, and K. C. Saraswat, IEEE Trans. Electron Devices ED-34, 1008 (1987).