Exciton tunnelling in ZnCdSe quantum well/CdSe quantum dots

Solid State Communications

Volumn 130, Issue 10, 2004, Pages 653-655

  Jin, Hua ^a   Zhang, Li Gong ^a   Zheng, Zhu Hong ^a   Kong, Xiang Gui ^a   Shen, De Zhen ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

A. Quantum dots; A. Quantum wells; D. Tunnelling; E. Luminescence

Indexed keywords

ATOMIC FORCE MICROSCOPY; BINDING ENERGY; ELECTRON TUNNELING; EXCITONS; LASER BEAMS; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; PHOTOMULTIPLIERS; QUANTUM THEORY; RAMAN SCATTERING; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

DISCRETE ENERGY LEVELS; EXCITON TUNNELLING; NEAR-RESONANT PUMP-PROBE MEASUREMENTS; TUNNELLING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 2142643695     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.03.036     Document Type: Article

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