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Volumn 41, Issue 4 B, 2002, Pages 2694-2697

Performance of silicon based bi-directional electron pumps consisting of two coulomb blockade devices

Author keywords

Coulomb blockade; Electron pump; Multiple tunnel junction; Silicon; Single electron transistor

Indexed keywords

COULOMB BLOCKADE; ELECTRIC RESISTANCE; ELECTRON TUNNELING; ELECTRONS; FREQUENCIES; SILICON ON INSULATOR TECHNOLOGY;

ELECTRON PUMP; MULTIPLE TUNNEL JUNCTION; SINGLE ELECTRON TRANSISTOR;

SILICON;

EID: 21344461942 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.41.2694 Document Type: Article

Times cited : (3)

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