A new architecture of dual control gate EEPROM

Journal of Non-Crystalline Solids

Volumn 351, Issue 21-23, 2005, Pages 1906-1910

  Regnier, A ^a,b   Laffont, R ^a   Bouchakour, R ^a   Mirabel, J M ^b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER ARCHITECTURE; COMPUTER PROGRAMMING; DEGRADATION; DENSITY (SPECIFIC GRAVITY); ELECTRIC POTENTIAL; MATHEMATICAL MODELS; RELIABILITY; SEMICONDUCTOR JUNCTIONS;

DRAIN BULK; ELECTRICALLY ERASABLE AND PROGRAMMABLE READ-ONLY MEMORY (EEPROM); FLOATING GATE; SELECT TRANSISTOR;

PROM;

EID: 21144439342     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.04.036     Document Type: Conference Paper

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