Highly polarized electrons from GaAs-GaAsP and InGaAs-AlGaAs strained-layer superlattice photocathodes

Journal of Applied Physics

Volumn 97, Issue 9, 2005, Pages

  Nishitani, T ^a   Nakanishi, T ^a   Yamamoto, M ^a   Okumi, S ^a   Furuta, F ^a   Miyamoto, M ^a   Kuwahara, M ^a   Yamamoto, N ^a   Naniwa, K ^a   Watanabe, O ^a   Takeda, Y ^a   Kobayakawa, H ^a   Takashima, Y ^a   Horinaka, H ^b   Matsuyama, T ^b   Togawa, K ^c   Saka, T ^d   Tawada, M ^e   Omori, T ^e   Kurihara, Y ^e   Yoshioka, M ^e   Kato, K ^f   Baba, T ^g   more..

^a NAGOYA UNIVERSITY   (Japan)

^b Osaka Prefecture University   (Japan)

^c RIKEN HARIMA INSTITUTE   (Japan)

^d DAIDO UNIVERSITY   (Japan)

^e HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

^f DAIDO STEEL CO LTD   (Japan)

^g NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NEGATIVE ELECTRON AFFINITY (NEA); POLARIZED ELECTRON SOURCE (PES); SPIN-RESOLVED QUANTUM EFFICIENCY SPECTRA; SURFACE CHARGE LIMIT (SCL);

ELECTRON BEAMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MODULATION; MOLECULAR BEAM EPITAXY; PHOTOCATHODES; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SUPERLATTICES;

POLARIZATION;

EID: 21044459499     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1886888     Document Type: Article

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