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Volumn 86, Issue 6, 2005, Pages 1-3

Identifying materials with low friction and adhesion for nanotechnology applications

Author keywords

[No Author keywords available]

Indexed keywords

ADHESIVE FORCES; HERTZIAN CONTACT ANALYSIS; PLOUGHING EFFECTS; SLIDING VELOCITY;

EID: 21044434358     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1856688     Document Type: Article
Times cited : (26)

References (40)
  • 19
    • 21044433587 scopus 로고    scopus 로고
    • West Palm Beach, FL
    • N. S. Tambe and B. Bhushan, Si (100) was obtained from Wafer World Inc. (West Palm Beach, FL). The DLC was a 10-nm-thick film prepared by filtered cathodic arc deposition on Si (100) substrate. The aluminum sample was a 205 nm film with traces of Ti and Si deposited on a Si substrate. PMMAwas a 1- to 2- μm-thick film prepared by dissolving 10% by weight of PMMA in an organic solvent (anisole) and spin coating at 2000 rpm on a glass substrate. PDMS was prepared from a mixture of a translucent base in a curing agent (10:1 ratio) which was then vacuum dried and cured for 48 h al room temperature.
    • Si (100) Was Obtained from Wafer World Inc.
    • Tambe, N.S.1    Bhushan, B.2
  • 32
    • 0004254886 scopus 로고
    • Properties of silicon
    • INSPEC (Institution of Electrical Engineers, London)
    • Anonymous, Properties of Silicon, EMIS Data Reviews Series No. 4, INSPEC (Institution of Electrical Engineers, London, 1988);
    • (1988) EMIS Data Reviews Series No. 4 , vol.4
  • 35
    • 84860947234 scopus 로고    scopus 로고
    • Anonymous, http://www.matweb.com
  • 38
    • 21044434636 scopus 로고    scopus 로고
    • G. Wei, The Young's modulus and hardness were obtained on Nanolndenlor II (MTS Systems Corporation) using continuous stiffness measurement technique. The indentation deplh was 200 nm with oscillation frequency of 45 Hz and oscillation amplitude of 1 nm
    • G. Wei, The Young's modulus and hardness were obtained on Nanolndenlor II (MTS Systems Corporation) using continuous stiffness measurement technique. The indentation deplh was 200 nm with oscillation frequency of 45 Hz and oscillation amplitude of 1 nm.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.