Structure and electrical properties of sol-gel-derived (001)-oriented Pb[Yb 1/2Nb 1/2]O 3-PbTiO 3 thin films grown on LaNb O 3/Si(001) substrates

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Zhou, Q F ^a   Shung, K K ^a   Zhang, Q Q ^b   Djuth, F T ^b  

^a University of Southern California ^*  (United States)

^b Geospace Research Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURIE TEMPERATURE; PHASE BOUNDARY; PIEZOELECTRIC COEFFICIENTS; ROOM TEMPERATURE;

ANNEALING; GRAIN SIZE AND SHAPE; MICROELECTROMECHANICAL DEVICES; PERMITTIVITY; SOL-GELS; SUBSTRATES; SUPERCONDUCTING TRANSITION TEMPERATURE; THIN FILMS; ULTRASONIC TRANSDUCERS; X RAY DIFFRACTION ANALYSIS;

LEAD COMPOUNDS;

EID: 20944444172     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1894582     Document Type: Article

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