Stability of Se passivation layers on Si(001) surfaces characterized by time-of-flight positron annihilation induced Auger electron spectroscopy

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Zhu, J G ^a   Nadesalingam, M P ^b   Weiss, A H ^b   Tao, M ^a  

^a The University of Texas at Arlington   (United States)

^b UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURE; PASSIVATION LAYERS; POSITRON ANNIHILATION AUGER ELECTRON SPECTROSCOPY (PAES);

ADSORPTION; ANNEALING; AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; CHEMISORPTION; DESORPTION; SELENIUM; SILICON; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

PASSIVATION;

EID: 20944443727     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1897488     Document Type: Article

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