Effects of temperature on good rectifying characteristic of manganite-based p-n junction

Applied Physics Letters

Volumn 86, Issue 19, 2005, Pages 1-3

  Cai, Tian Yi ^a   Li, Zhen Ya ^a,b  

^a SOOCHOW UNIVERSITY   (China)

^b CCAST WORLD LABORATORY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; DIFFUSION IN SOLIDS; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRONIC STRUCTURE; HOLE MOBILITY; MAGNETORESISTANCE; MANGANESE COMPOUNDS; TEMPERATURE DISTRIBUTION;

MANGANITE; P-N JUNCTIONS; SPLITTING ENERGY; TEMPERATURE DEPENDENCE;

SEMICONDUCTOR JUNCTIONS;

EID: 20844461499     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1923171     Document Type: Article

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