Current and noise in a model of an alternating current scanning tunneling microscope molecule-metal junction

Journal of Chemical Physics

Volumn 122, Issue 14, 2005, Pages

  Guyon, R ^a,b   Jonckheere, T ^a   Mujica, V ^c   Crpieux A ^a,b   Martin, T ^a,b  

^a CENTRE DE PHYSIQUE THÉORIQUE   (France)

^b AIX MARSEILLE UNIVERSITY   (France)

^c FACULTAD DE CIENCIAS   (Venezuela)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING PROPERTIES; CURRENT FLUCTUATIONS; FINITE LEVEL STRUCTURES; MOLECULE-METAL JUNCTIONS;

ELECTRIC INSULATION; ELECTRIC POTENTIAL; ELECTRODES; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; SPURIOUS SIGNAL NOISE;

ELECTRIC CURRENTS;

EID: 20844455174     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1878593     Document Type: Article

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