Unidirectional beam emission from strained InGaAsP multiple-quantum-well quasistadium laser diodes

Applied Physics Letters

Volumn 86, Issue 17, 2005, Pages 1-3

  Fukushima, Takehiro ^a,b   Tanaka, Tomoko ^b   Harayama, Takahisa ^b  

^a OKAYAMA PREFECTURAL UNIVERSITY   (Japan)

^b ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LITHOGRAPHY; REACTIVE ION ETCHING; RESONATORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SILICA;

BEAM SWITCHING DEVICES; FOX-LI MODE CALCULATIONS; QUASISTADIUM; SEPARATE-CONFINEMENT HETEROSTRUCTURE (SCH);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 20844452862     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1920430     Document Type: Article

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