Charging efficiency and lifetime of image-bound electrons on a dielectric surface

Applied Physics Letters

Volumn 86, Issue 16, 2005, Pages 1-3

  Biasini, M ^a,b   Gann, R D ^a   Yarmoff, J A ^a   Mills, A P ^a   Pfeiffer, L N ^c   West, K W ^c   Gao, X P A ^d   Williams, B C D ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b ENEA   (Italy)

^c LUCENT TECHNOLOGIES   (United States)

^d LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGING EFFICIENCY; DIELECTRIC SURFACE; IMAGE-BOUND ELECTRONS; TWO-DIMENSION ELECTRON GASS (2DEG);

DIELECTRIC MATERIALS; EPITAXIAL GROWTH; FIELD EFFECT SEMICONDUCTOR DEVICES; SECONDARY EMISSION; SEMICONDUCTOR QUANTUM WELLS; XENON;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 20844451162     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1906314     Document Type: Article

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