Space-charge-limited current involving carrier injection into impurity bands of high-k insulators

Applied Physics Letters

Volumn 86, Issue 20, 2005, Pages 1-3

  Goldenblum, A ^a   Pintilie, I ^a   Buda, M ^a   Popa, A ^a   Botila, T ^a   Dimoulas, A ^b   Vellianitis, G ^b  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; DEPOSITION; ELECTRIC CHARGE; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; FERMI LEVEL; IMPURITIES; LANTHANUM COMPOUNDS; PHOTOELECTRICITY; SILICON;

FLAT-BAND VOLTAGE; HIGH-K INSULATORS; IMPURITY CHANNELS; SPACE CHARGE LIMITED (SCL) CURRENT;

ELECTRIC INSULATORS;

EID: 20844442287     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1935045     Document Type: Article

References (7)

1. C.-Y. Liu, B.-Y. Chen, and T.-Y. Tseng, J. Appl. Phys. 95, 5602 (2004).
2. A. Paskaleva, A. Bauer, M. Lemberger, and S. Zurcher, J. Appl. Phys. 95, 5583 (2004).
3. A. Dimoulas, G. Vellianitis, G. Mavrou, G. Apostolopoulos, A. Travlos, C. Wiemer, M. Fanciulli, and Z. M. Rittersma, Appl. Phys. Lett. 85, 3205 (2004).
4. M. A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970).
5. N. F. Mott and E. A. Davis, Electronic Processes in Noncrystalline Materials, 2nd ed. (Clarendon, Oxford, 1979).
6. W. Xiang, H. Lu, L. Yan, H. Guo, L. Liu, Y. Zhou, and G. Yang, J. Appl. Phys. 93, 533 (2003).
7. A. S. Foster, F. Lopez Gejo, A. L. Shluger, and R. M. Nieminen, Phys. Rev. B 65, 174117 (2002).