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Volumn 66, Issue 15, 2002, Pages 1552021-1552024

Direct observation of the Ce 4f states in the kondo semiconductor CeRhAs and related compounds: A high-resolution resonant photoemission study

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; CERIUM; RHODIUM COMPLEX;

EID: 20744441132     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (28)

References (37)
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    • note
    • Scanning electron microscope images of scraped surfaces indicated many scratches along the traces of a diamond file. Many fragments of the order of ∼μm size stuck on the scraped surface, leading to bad thermal and electrical contacts. The images of the fractured surfaces exhibited appreciably wide and flat areas, and had almost no fragments left.
  • 18
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    • note
    • F for CeRhSb, and (3) a smaller reduction of the spectral intensity above ∼90 meV for CeRhAs.
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    • note
    • -1, respectively. With the present experimental configuration, and with the kinetic energy of a photoelectron of ∼120 eV, the photoemission spectra are averaged over 80-150% of the Brillouin zone (BZ) along the slit direction, and 20-40% of the BZ perpendicular to the slit direction.
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    • See for example, E. Weschke et al., Phys. Rev. B 44, 8304 (1991); H.-D. Kim et al., ibid. 56, 1620 (1997); T. Iwasaki et al., ibid. 61, 4621 (2000).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.