Effects of J-gate potential and uniform electric field on a coupled donor pair in Si for quantum computing

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 15, 2002, Pages 1553311-1553319

  Fang, Angbo ^a   Chang, Y C ^a   Tucker, J R ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHOSPHORUS; SILICON;

ALGORITHM; ARTICLE; CALCULATION; ELECTRIC FIELD; ELECTRON; ENERGY; MATHEMATICAL ANALYSIS; QUANTUM MECHANICS;

EID: 20744434444     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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