Studies of radiation effects in the NA60 silicon pixel detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 546, Issue 3, 2005, Pages 448-456

  Keil, M ^a,b   Banicz, K ^c   Brugger, M ^a   Floris, M ^d   Heuser, J M ^e   Lourenco C ^a   Ohnishi, H ^e   Radermacher, E ^a   Usai, G ^d  

^a CERN   (Switzerland)

^b INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^c UNIVERSITY OF HEIDELBERG   (Germany)

^d UNIVERSITY OF CAGLIARI   (Italy)

^e RIKEN   (Japan)

Author keywords

Pixel detector; Radiation damage; Silicon; Vertex detector

Indexed keywords

ANNEALING; COLLIDING BEAM ACCELERATORS; COMPUTER SIMULATION; DOPING (ADDITIVES); LEAKAGE CURRENTS; RADIATION DAMAGE; RADIATION EFFECTS; SILICON SENSORS;

DETECTOR PLANES; MUON SPECTROMETERS; PIXEL DETECTORS; VERTEX DETECTORS;

PARTICLE DETECTORS;

EID: 20744433337     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.02.044     Document Type: Article

References (9)

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