Thermal hopping of single charges in the strong dissipation limit

JETP Letters

Volumn 64, Issue 8, 1996, Pages 592-600

  Vyshenski, S V ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 20644434779     PISSN: 00213640     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.567267     Document Type: Article

References (14)

1. H. Grabert and M. Devoret, eds., Single Charge Tunneling, Plenum, New York, 1992.
2. K. Likharev and A. Zorin, J. Low Temp. Phys. 59, 347 (1985);
3. D. Averin, K. Likharev, J. Low Temp. Phys. 62, 345 (1986).
4. B. Kramer, ed., Quantum Transport in Semiconductor Submicron Structures, Kluwer, Netherlands, 1996.
5. S. Vyshenski, J. Low-Dim. Struct. 11/12, 9 (1994);
6. S. Vyshenski, JETP Lett. 61, 111 (1995);
7. M. Baidakova, N. Bert, S. Gurevich et al., Intern. Symp. Nanostructures: Physics and Technology, St. Petersburg (1994), p. 131;
8. S. Gurevich, A. Ekimov, I. Kudryavtsev et al., Fiz. Tekh. Poluprovodn. 28, 830 (1994)
9. [Semiconductors 28, 486 (1994)];
10. Ext. Abstr. Solid State Devices and Materials, Yokohama (1996).
11. H. Kramers, Physica (Utrecht) 7, 284 (1940).
12. A. Korotkov, Phys. Rev. B 49, 11508 (1994);
13. D. Averin, Phys. Rev. B 50, 8934 (1994).
14. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai, and K. Seki, Appl. Phys. Lett. 76, 828 (1995).