Transition from strong to weak localization in the split-off impurity band in two-dimensional p-GaAs/AlGaAs structures

JETP Letters

Volumn 80, Issue 1, 2004, Pages 30-34

  Agrinskaya, N V ^a   Kozub, V I ^a   Poloskin, D V ^a   Chernyaev, A V ^a   Shamshur, D V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 20444491167     PISSN: 00213640     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1800210     Document Type: Article

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