Modeling and analysis of carbon nanotube interconnects and their effectiveness for high speed VLSI design

2004 4th IEEE Conference on Nanotechnology

Volumn , Issue , 2004, Pages 608-610

  Raychowdhury, Arijit ^a   Roy, Kaushik ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS; LOGIC DESIGN; SEMICONDUCTOR MATERIALS; VLSI CIRCUITS;

INTERCONNECTS; INTERCONNET MATERIALS; VLSI DESIGN;

CARBON NANOTUBES;

EID: 20444397337     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. P. J. Burke, IEEE Trans. On Nanotech, Vol 1(3), Sept 2002, pp: 129-143
2. International Technology Roadmap for Semiconductors http://public.itrs. net/
3. Ji-Yong, et al, cond-mat/0309641, Sept. 28, 2003.
4. Wen Wu et. al., Proc of Solid-State and Integrated-Circuit Technology, Volume:22-25, Oct 2001 pp:416-418 vol.1
5. Zhong et. al, Proc. of Int. Conf. on Comp Design, pp. 428-433, 2002.