Angle-dependent X-ray photoelectron spectroscopy study of the evolution of GaAs(Cs,O) surface during "high-low temperature" activation

IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings

Volumn , Issue , 2004, Pages 271-

  Du, Xiao Qing ^a   Chang, Ben Kang ^a  

^a NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

"High low temperature" activation; Angle dependent; GaAs; NEA; Surface escape probability; X ray photoelectron spectroscopy

Indexed keywords

ACTIVATION ANALYSIS; CHEMICAL BONDS; HIGH TEMPERATURE EFFECTS; PHOTOEMISSION; PROBABILITY; SENSITIVITY ANALYSIS; THICKNESS MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE-DEPENDENT; HIGH-LOW TEMPERATURE ACTIVATION; SINGLE-STEP ACTIVATION; SURFACE ESCAPE PROBABILITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 20444389437     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)