Differences between quantum kinetic phonon beats and raman beats

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 15, 2002, Pages 1532031-1532034

  Hugel W A ^a   Wegener, M ^a   Vu, Q T ^b   Banyai L ^b   Haug, H ^b   Tinjod, F ^c   Mariette, H ^c  

^a UNIVERSITY OF KARLSRUHE   (Germany)

^b GOETHE UNIVERSITY   (Germany)

^c CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CADMIUM; GALLIUM; TELLURIUM;

ARTICLE; ELECTRON; ENERGY; KINETICS; MASS; OSCILLATION; PHOTON; QUANTUM MECHANICS; QUANTUM THEORY; SEMICONDUCTOR;

EID: 2042469298     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.153203     Document Type: Article

References (14)

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10. The CdTe exciton binding energy is 9.6 meV equivalent to 430 fs period, the round trip time of light in the 300 nm CdTe film is 6 fs, that of the 700 μ m thick ZnTe substrate 13 ps, and the spinorbit split band is separated in energy by 0.8-0.9 eV, equivalent to 5 fs beat period. All of these times are well separated from the observed oscillation period of 34 fs.
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