Study on the subband properties of AlxGa1-xN/GaN modulation-doped heterostructures

Wuli Xuebao/Acta Physica Sinica

Volumn 53, Issue 2, 2004, Pages 596-600

  Zheng, Ze Wei ^a,b   Shen, Bo ^b   Gui, Yong Sheng ^c   Qiu, Zhi Jun ^c   Tang, Ning ^b   Jiang, Chun Ping ^c   Zhang, Rong ^b   Shi, Yi ^b   Zheng, You Dou ^b   Guo, Shao Lin ^c   Chu, Jun Hao ^c  

^a PLA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b NANJING UNIVERSITY   (China)

^c SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

AlGaN GaN heterostructurs; Subband occupation; Transport mobility; Two dimensional electron gas

Indexed keywords

EID: 2042445048     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)