Thin ferroelectric film between double schottky barriers

Materials Research Society Symposium Proceedings

Volumn 830, Issue , 2005, Pages 183-188

  Delimova, Lyuba A ^a   Grekhov, Igor V ^a   Mashovets, Dmitri V ^a   Shin, Sangmin ^b   Koo, June Mo ^b   Kim, Suk Pil ^b   Park, Youngsoo ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; ELECTRIC FIELDS; ELECTROMAGNETIC WAVE POLARIZATION; INTERFACES (MATERIALS); PERMITTIVITY; POISSON EQUATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; ULSI CIRCUITS;

ENERGY-BAND DIAGRAM; GAUSS'S LAW; P-TYPE SEMICONDUCTORS; STRUCTURE PARAMETERS;

FERROELECTRIC THIN FILMS;

EID: 20344398657     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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