Advances in SiGe HBT BiCMOS technology

2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers

Volumn , Issue , 2004, Pages 1-4

  Joseph, A ^a   Lanzerotti, L ^a   Liu, X ^a   Sheridan, D ^a   Johnson, J ^a   Liu, Q ^a   Dunn, J ^a   Rieh, J S ^a   Harame, D ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

BiCMOS Technologies; Bipolar; SiGe HBT

Indexed keywords

BICMOS TECHNOLOGY; BIPOLAR; SIGE HBT; TRANSIENT ENHANCED DIFFUSION (TED);

ELECTRIC BREAKDOWN; HETEROJUNCTION BIPOLAR TRANSISTORS; NATURAL FREQUENCIES; OPTIMIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE; WIRELESS TELECOMMUNICATION SYSTEMS;

CMOS INTEGRATED CIRCUITS;

EID: 20344397113     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

1. D. Harame, TED, November 2001.
2. D. Harame TED, November 2001.
3. "Silicon Germanium Materials & Devices - a market & technology to 2006," Roy Szweda, Elsevier Advanced Technology Ltd., 2003.
4. Prism products, http://www.conexant.com
5. Natalie F. BCTM, October 2002.
6. Q. Liu, submitted to BCTM, 2004.
7. K. Schuegraf, ITSM, May 2003.
8. C. King, IEDM, December 1999
9. B. Jagannathan, EDL, May 2002
10. G. Freeman TED, March 2003
11. B. Orner, BCTM, October 2003
12. A. Chantre, TED, July 1999
13. A. Joseph, ISTDM, January 2003.