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Volumn 26, Issue 5, 2005, Pages 965-969

Measurement of specific contact resistivity of ohmic contact on p-GaN

Author keywords

CTLM; p GaN; SCR; TLM

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE MEASUREMENT; MATHEMATICAL MODELS; OHMIC CONTACTS;

EID: 20344394191     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (5)

References (10)
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  • 2
    • 0004167140 scopus 로고    scopus 로고
    • Nitride semiconductors and device
    • Berlin: Springer
    • Morkoc H. Nitride semiconductors and device. Berlin: Springer, 1999: XV
    • (1999) , pp. 15
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  • 3
    • 0002691353 scopus 로고    scopus 로고
    • GaN-dawn of 3rd-generation-semiconductors
    • Chinese source
    • Liang Chunguang, Zhang Ji. GaN-dawn of 3rd-generation-semiconductors. Chinese Journal of Semiconductors, 1999, 20(2): 89 (in Chinese)
    • (1999) Chinese Journal of Semiconductors , vol.20 , Issue.2 , pp. 89
    • Liang, C.1    Zhang, J.2
  • 4
    • 0346282583 scopus 로고    scopus 로고
    • Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces
    • Ishikawa H, Kobayashi S, Koide Y, et al. Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces. J Appl Phys, 1997, 81(3): 1315
    • (1997) J Appl Phys , vol.81 , Issue.3 , pp. 1315
    • Ishikawa, H.1    Kobayashi, S.2    Koide, Y.3
  • 5
    • 1942541477 scopus 로고    scopus 로고
    • Investigation on surface of p-GaN
    • Chinese source
    • Xue Song, Han Yanjun, Guo Wenping, et al. Investigation on surface of p-GaN. Chinese Journal of Semiconductors, 2003, 24(12): 1280 (in Chinese)
    • (2003) Chinese Journal of Semiconductors , vol.24 , Issue.12 , pp. 1280
    • Xue, S.1    Han, Y.2    Guo, W.3
  • 6
    • 0000886283 scopus 로고    scopus 로고
    • Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films
    • Ho J K, Jong C S, Chiu C C, et al. Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films. J Appl Phys, 1999, 86(8): 4491
    • (1999) J Appl Phys , vol.86 , Issue.8 , pp. 4491
    • Ho, J.K.1    Jong, C.S.2    Chiu, C.C.3
  • 8
    • 49149141662 scopus 로고
    • Specific contact resistance using a circular transmission line model
    • Reeves G K. Specific contact resistance using a circular transmission line model. Solid-State Electron, 1980, 23: 487
    • (1980) Solid-State Electron , vol.23 , pp. 487
    • Reeves, G.K.1
  • 9
    • 0020089025 scopus 로고
    • The effects of contact size and non-zero metal resistance on the determination of specific contact resistance
    • Marlow G S, Das M B. The effects of contact size and non-zero metal resistance on the determination of specific contact resistance. Solid-State Electron, 1982, 25: 91
    • (1982) Solid-State Electron , vol.25 , pp. 91
    • Marlow, G.S.1    Das, M.B.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.