Chemical vapor deposition of germanium nanocrystals on hafnium oxide for non-volatile memory applications

Materials Research Society Symposium Proceedings

Volumn 830, Issue , 2005, Pages 269-274

  Wang, Ying Qian ^a   Chen, Jing Hao ^a   Yoo, Won Jong ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION TEMPERATURE; DEPOSITION TIME; FLOW RATE; GATE DIELECTRICS;

CAPACITANCE; CAPACITORS; CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; GATES (TRANSISTOR); GERMANIUM COMPOUNDS; HAFNIUM COMPOUNDS; NONVOLATILE STORAGE; PARTICLE SIZE ANALYSIS; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY; SILICA; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

NANOSTRUCTURED MATERIALS;

EID: 20344380157     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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