Monolithic active pixel sensor realized in SOI technology-concept and verification

Microelectronics Reliability

Volumn 45, Issue 7-8, 2005, Pages 1202-1207

  Niemiec, H ^a   Bulgheroni, A ^b   Caccia, M ^b   Grabiec, P ^c   Grodner, M ^c   Jastrzab, M ^a   Kucewicz, W ^a   Kucharski, K ^c   Kuta, S ^a   Marczewski, J ^c   Sapor, M ^a   Tomaszewski, D ^c  

^a AGH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Poland)

^b UNIVERSITY OF INSUBRIA   (Italy)

^c Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CMOS INTEGRATED CIRCUITS; DIODES; HIGH ENERGY PHYSICS; IONIZING RADIATION; NUCLEAR PHYSICS; RADIATION DETECTORS; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE;

ELECTRICAL SEPARATION; MONOLITHIC ACTIVE PIXEL DETECTOR; MONOLITHIC ACTIVE PIXEL SENSOR; SENSOR SENSITIVITY;

SILICON SENSORS;

EID: 20344377146     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.10.014     Document Type: Article

References (10)

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