Simulation of electrical characteristics of surrounding- and omega-shaped-gate nanowire FinFETs

2004 4th IEEE Conference on Nanotechnology

Volumn , Issue , 2004, Pages 281-283

  Tang, Chien Shao ^a   Yu, Shao Ming ^a   Chou, Hong Mu ^a   Lee, Jam Wem ^b   Li, Yiming ^a,b,c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NONE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; MATHEMATICAL MODELS; NANOTECHNOLOGY; QUANTUM THEORY; SEMICONDUCTOR DEVICES;

3D SIMULATION; COVERAGE RATION; DENSITY-GRADIENT; FINFET; GATE CAPACITANCE; NANODEVICES; NANOWIRES; OMEGA-SHAPED-GATES; QUANTUM CORRECTION MODEL; SURROUNDING-GATE;

FIELD EFFECT TRANSISTORS;

EID: 20344374683     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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