Synthesis and electrical characterization of a MOS memory containing Pt nanoparticles deposited at a SiO2/ HfO2 interface

Materials Research Society Symposium Proceedings

Volumn 830, Issue , 2005, Pages 275-280

  Sargentis, Ch ^a   Giannakopoulos, K ^b   Travlos, A ^b   Tsamakis, D ^a  

^a NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^b INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHARACTERIZATION; ELECTRIC POWER UTILIZATION; HAFNIUM COMPOUNDS; MOS DEVICES; NONVOLATILE STORAGE; PLATINUM; SEMICONDUCTOR QUANTUM WELLS; SILICA; SYNTHESIS (CHEMICAL); VOLTAGE MEASUREMENT;

DEGREE OF SCALABILITY; DIELECTRIC LAYERS; ELECTRICAL CHARACTERIZATION; METAL NANOPARTICLES; NON-VOLATILITY;

NANOSTRUCTURED MATERIALS;

EID: 20344371692     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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