Electrical properties of highly reliable 32 Mb FRAM with advanced capacitor technology

Microelectronics Reliability

Volumn 45, Issue 7-8, 2005, Pages 1150-1153

  Song, Y J ^a   Joo, H J ^a   Kang, S K ^a   Kim, H H ^a   Park, J H ^a   Kang, Y M ^a   Kang, E Y ^a   Lee, S Y ^a   Kim, K ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRIC POWER UTILIZATION; ELECTRODES; FERROELECTRIC MATERIALS; FERROELECTRICITY; INTERFACES (MATERIALS); OPTIMIZATION; SCANNING ELECTRON MICROSCOPY; SOL-GELS;

FERROELECTRIC CAPACITORS; FERROELECTRIC FILMS; MEGA-BIT DENSITY; POWER CONSUMPTION;

RANDOM ACCESS STORAGE;

EID: 20344364863     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.08.014     Document Type: Article

References (3)

1. D. Bondurant, and F. Gnadinger Ferroelectrics for nonvolatile RAMs IEEE Spectrum 26 1989 30 33
2. J.T. Evans, and R. Womack An experimental 512-bit non-volatile memory with ferroelectric storage cell IEEE J. Solid-State Circuit 23 1988 1171
3. K.N. Kim Technology prospective for 1 T/1C FRAM Integr. Ferroelectr. 25 1999 149 167