Impact of nitrogen profile engineering on ultra-thin nitrided oxide films for dual-gate CMOS ULSI

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 327-330

  Hasegawa, E ^a   Kawata, M ^a   Ando, K ^a   Makabe, M ^a   Kitakata, M ^a   Ishitani, A ^a   Manchanda, L ^a   Green, M L ^a   Krisch, K S ^a   Feldman, L C ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEGRADATION; DIELECTRIC FILMS; DIFFUSION IN SOLIDS; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); MOSFET DEVICES; OPTIMIZATION; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; ULSI CIRCUITS; ULTRATHIN FILMS;

BORON DIFFUSION; DUAL GATE CMOS DEVICES; ETCHING RATE RATIO; GATE ELECTRODE; NITRIDATION; NITROGEN PROFILE ENGINEERING; NUCLEAR REACTION ANALYSIS; ULTRATHIN NITRIDE OXIDE FILMS;

NITROGEN;

EID: 20244380605     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)