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Journal of Electron Spectroscopy and Related Phenomena

Volumn 144-147, Issue , 2005, Pages 553-555

Temperature-induced valence transition in EuNi2(Si 0.20Ge0.80)2 studied by hard X-ray photoemission spectroscopy

(20) Yamamoto, Kazuya a,b Kamakura, Nozomu b Taguchi, Munetaka b Chainani, Ashish b Takata, Yasutaka b Horiba, Koji b Shin, Shik b,c Ikenaga, Eiji d Mimura, Kojiro a Shiga, Masayuki e Wada, Hirofumi e Namatame, Hirofumi f Taniguchi, Masaki f Awaji, Mitsuhiro d Takeuchi, Akihisa d Nishino, Yoshinori b Miwa, Daigo b Tamasaku, Kenji b Ishikawa, Tetsuya b Kobayashi, Keisuke d

a Osaka Prefecture University (Japan)

b RIKEN/SPring 8 ^* (Japan)

c UNIVERSITY OF TOKYO (Japan)

d JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE (Japan)

e KYOTO UNIVERSITY (Japan)

f HIROSHIMA UNIVERSITY (Japan)

Author keywords

EuNi2(Si1 xGex)2; Hard X ray photoemission; Rare earth compounds; Temperature induced valence transition

Indexed keywords

ABSORPTION; EMISSION SPECTROSCOPY; FRACTURE; MAGNETIC FIELD EFFECTS; MAGNETIC SUSCEPTIBILITY; PHASE TRANSITIONS; PHOTOEMISSION; RARE EARTH COMPOUNDS; SUPERCONDUCTING TRANSITION TEMPERATURE; SURFACE PHENOMENA; THERMAL EFFECTS; X RAY SPECTROSCOPY;

EUNI2(SI1-XGEX)2; FRACTURE SURFACES; HARD X-RAY PHOTOEMISSION; TEMPERATURE-INDUCED VALENCE TRANSITION;

EUROPIUM COMPOUNDS;

EID: 20244379127 PISSN: 03682048 EISSN: None Source Type: Journal
DOI: 10.1016/j.elspec.2005.01.089 Document Type: Conference Paper

Times cited : (5)

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