Fabrication of 200 to 2700 GHz multiplier devices using GaAs and metal membranes

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2001, Pages 1641-1644

  Martin, Suzanne ^a   Nakamura, Barbara ^a   Fung, Andy ^a   Smith, Peter ^b   Bruston, Jean ^a   Maestrini, Alain ^a   Maiwald, Frank ^a   Siegel, Peter ^a   Schlecht, Erich ^a   Mehdi, Imran ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LOADS; ELECTRON BEAM LITHOGRAPHY; NETWORKS (CIRCUITS); REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES;

METAL MEMBRANES; MONOLITHIC CIRCUITS; MULTIPLIER DEVICES; WET CHEMICAL;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 20244364771     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.967219     Document Type: Article

References (6)

1. Solid-state oscillators for the THz-range
2. 2.5 THz GaAs monolithic membrane-diode mixer
3. A 2.5 THz receiver front end for spaceborne applications
4. High efficiency MMIC frequency triplers for millimeter and submillimeter wavelengths
5. Cryogenic operation of GaAs based multiplier chains to 400GHz
6. 2.7 THz waveguide tripler using monolithic membrane diodes (MOMED)