Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 2004, Pages 53-54

  Thompson, M G ^a   Marinelli, C ^a   Chu, Y ^a   Sellin, R L ^a   Penty, R V ^a   White, I H ^a   Van Der Poel, M ^b   Birkedal, D ^b   Hvam, J ^b   Ustinov, V M ^c   Lammlin M ^d   Bimberg, D ^d  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^c IOFFE INSTITUTE   (Russian Federation)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELDS; ENERGY ABSORPTION; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; WAVEGUIDES;

MONOLITHIC MODE-LOCKED LASERS; QUANTUM CONFINED STARK EFFECT (QCSE); QUANTUM DOT LASERS; THRESHOLD CURRENT DENSITY;

LASER MODE LOCKING;

EID: 20144389870     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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3. X. Huang et al., J. Quantum El. 37, p.414, (2001).
4. M.G. Thompson et al., El. Lett. 39, p. 1121, (2003); M. Kuntz et al., CLEO 2004, San Francisco, USA.
5. M.G. Thompson et al., El. Lett. 39, p. 1121, (2003); M. Kuntz et al., CLEO 2004, San Francisco, USA.
6. C. Kapteyn et al., Phys. Rev. B 60, 14265 (1999)