The experimental-numerical investigation of instability of faceted Ge doped by Sb growth on the base of AHP method

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Bykova, Sveta V ^a   Golyshev, Vladimir D ^a   Gonik, Michael A ^a   Tsvetovsky, Vladimir B ^a   Balikci, Ercan ^b   Deal, Andrew ^b   Abbaschian, Reza ^b   Marchenko, Marina P ^c   Frjazinov, Igor V ^c   Vlasov, Vladimir N ^d   Serebrjakov, Jury A ^d  

^a Ctr for Thermophys Res Thermo   (Russian Federation)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c INSTITUTE OF MATHEMATICAL MODELING   (Russian Federation)

^d Space Mat Sci Res Ctr Inst C ^*  (Russian Federation)

Author keywords

A1. Computer simulation; A1. Convection; A1. Crystal morphology; A2. Growth from melt; B1. Semiconducting germanium

Indexed keywords

ANTIMONY; COMPUTER SIMULATION; CRYSTALLIZATION; CRYSTALS; HEAT CONVECTION; HEAT TREATMENT; INTERFACES (MATERIALS); ISOTHERMS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GERMANIUM; SOLIDIFICATION;

AXIAL HEAT PROCESSING (AHP); CRYSTAL MORPHOLOGY; GROWTH FROM MELT; TEMPERATURE GRADIENTS;

CRYSTAL GROWTH;

EID: 20144385851     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.034     Document Type: Conference Paper

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