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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 235, Issue 1-4, 2005, Pages 456-459

Observation of surface modification and secondary particle emission in HCI-surface interaction

(8) Takahashi, Satoshi a Tona, Masahide b Nagata, Kazuo a Yoshiyasu, Nobuo a Nakamura, Nobuyuki a Sakurai, Makoto c Yamada, Chikashi a Ohtani, Shunsuke a

a UNIVERSITY OF ELECTRO COMMUNICATIONS (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c KOBE UNIVERSITY (Japan)

Author keywords

H terminated Si surface; Highly charged ions; Secondary electron; Secondary ion; Single ion implantation

Indexed keywords

CHARGED PARTICLES; ELECTRONIC STRUCTURE; ELECTRONS; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; POSITIVE IONS; PROTONS; SCANNING TUNNELING MICROSCOPY; SECONDARY EMISSION; SEMICONDUCTOR QUANTUM DOTS; SPUTTERING;

H-TERMINATED SI SURFACES; HIGHLY CHARGED IONS (HCI); SECONDARY ELECTRON; SECONDARY IONS; SINGLE ION IMPLANTATION;

SURFACE TREATMENT;

EID: 20144372507 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/j.nimb.2005.03.224 Document Type: Conference Paper

Times cited : (4)

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