Modeling Hot-Electron Injection in pFET's

Journal of Computational Electronics

Volumn 2, Issue 2-4, 2003, Pages 317-322

  Duffy, Chris ^a   Hasler, Paul ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Boltzmann transport; hot electron injection; impact ionization; modeling floating gate circuits; optical phonons; pFET's

Indexed keywords

BOLTZMANN EQUATION; ELECTRON INJECTION; ELECTRONS; FIELD EFFECT TRANSISTORS; HOT ELECTRONS; PHONONS;

BOLTZMANN TRANSPORT; BOLTZMANN TRANSPORT EQUATION; CHANNEL DEPLETION; FIRST PRINCIPLES; FLOATING GATE CIRCUITS; OPTICAL PHONONS; PFET'S; SCATTERING OPERATORS;

IMPACT IONIZATION;

EID: 20144367402     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/B:JCEL.0000011445.99473.5f     Document Type: Article

References (5)

1. Paul Hasler, Andreas Andreou, Chris Diorio, Bradley A. Minch, and Carver Mead, “Impact ionization and hot-electron injection derived consistently from Boltzman transport, ” VLSI Design, 8(14), 455 (1998).
2. E.M. Conwell, High Field Transport in Semiconductors (Academic Press, New York, 1967).
3. G.A. Baraff, “Maximum anisotropy approximation for calculating electron distributions; application to high field transport in semiconductors, ” Physical Review, 133(1A), A26 (1964).
4. KevinF. Brennan, The Physics of Semiconductors (Cambridge University Press, Cambridge, U.K., 1999).
5. Paul Hasler, “Foundations of Learning in Analog VLSI, ” Ph.D. thesis, California Institute of Technology (1997).