Electrical performance and reliability improvement by using compositionally varying Bi-layer structure of PVD HfSixOy dielectric

IEEE Electron Device Letters

Volumn 26, Issue 3, 2005, Pages 166-168

  Akbar, Mohammad S ^a   Choi, C H ^a   Rhee, S J ^a   Krishnan, S A ^a   Kang, C Y ^a   Zhang, M H ^a   Lee, T ^a   Ok, I J ^a   Zhu, F ^a   Kim, H S ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Charge trap; Equivalent oxide thickness(EOT); Flat band voltage; Hf silicate; Hysteresis; Time zero dielectric breakdown (TZDB)

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; HAFNIUM; HYSTERESIS; LEAKAGE CURRENTS; PERMITTIVITY; RELIABILITY; SEMICONDUCTOR DEVICE STRUCTURES; SILICATES;

CHARGE TRAP; EQUIVALENT OXIDE THICKNESS (EOT); FAT BAND VOLTAGE; TIME ZERO DIELECTRIC BREAKDOWN (TZDB);

MOSFET DEVICES;

EID: 20144366286     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.843927     Document Type: Article

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