Observation and characterization of defects in HfO2 high-K gate dielectric layers

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 798-801

  Kaushik, Vidya ^a,b   Claes, Martine ^b   Delabie, Annelies ^b   Elshocht, Sven Van ^b   Richard, Olivier ^b   Conard, Thierry ^b   Rohr, Erika ^b   Witters, Thomas ^b   Caymax, Matty ^b   Gendt, Stefan De ^c   Heyns, Marc ^b  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; DEFECTS; DIELECTRIC MATERIALS; ETCHING; HAFNIUM COMPOUNDS; MICROSTRUCTURE; SCANNING ELECTRON MICROSCOPY; SILICA; STOICHIOMETRY; THIN FILMS;

ELECTRICAL DEFECTS; HIGH K-GATE DIELECTRIC LAYERS; STRUCTURAL DEFECTS; WET-ETCH DEFECTS;

GATES (TRANSISTOR);

EID: 20044369895     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.045     Document Type: Conference Paper

References (2)

1. Claes M et al. In: Proc Mat Res Soc Fall 2002 Meeting. vol. 745. December 2002
2. Kaushik V et al. In: Proc Electrochem Soc Spring 2003 Meeting. April 2003