Study of mask process development for EUVL

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5446, Issue PART 2, 2004, Pages 832-840

  Abe, Tsukasa ^a   Nishiguchi, Masaharu ^a   Amano, Tsuyoshi ^a   Motonaga, Toshiaki ^a   Sasaki, Shiho ^a   Mohri, Hiroshi ^a   Hayashi, Naoya ^a   Tanaka, Yuusuke ^b   Yamanashi, Hiromasa ^b   Nishiyama, Iwao ^b  

^a DAI NIPPON PRINTING CO LTD   (Japan)

^b ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

Absorber layer; AFM; Buffer layer; Dry etching; EUVL; FIB; GAE; Mask

Indexed keywords

ATOMIC FORCE MICROSCOPY; CONTAMINATION; CRYSTAL DEFECTS; DRY ETCHING; MACHINING; PHOTOLITHOGRAPHY; ULTRAVIOLET RADIATION;

ABSORBER LAYERS; BUFFER LAYERS; EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL); FIB; GAE;

MASKS;

EID: 19944427110     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.557817     Document Type: Conference Paper

References (3)

1. nd International EUVL Symposium
2. Y. Iba, H. Kumasaka, T. Iizuka and M. Yamabe, jpn. J. Appl. Phys. 39, 5329 (2000)
3. T. Shoki, M. Hosoya, T. Kinoshita, H. Kobayashi, Y. Usui, R. Ohkubo, S IsMbashi and O. Nakarekawa, Proc. SPIE 4754, 857(2002)