Dependence of penetration depth, microwave surface resistance and energy gap of MgB2 thin films on their normal-state resistivity

Superconductor Science and Technology

Volumn 18, Issue 1, 2005, Pages

  Jin, B B ^a   Dahm, T ^b   Iniotakis, C ^b   Gubin, A I ^a   Choi, Eun Mi ^c   Kim, Hyun Jung ^c   Lee, Sung Ik ^c   Kang, W N ^d   Wang, S F ^e   Zhou, Y L ^e   Pogrebnyakov, A V ^f   Redwing, J M ^f   Xi, X X ^f   Klein, N ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b UNIVERSITY OF TÜBINGEN   (Germany)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

^d Pukyong National University   (South Korea)

^e INSTITUTE OF PHYSICS   (China)

^f PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA REDUCTION; ENERGY GAP; IMPURITIES; MAGNETIC FIELD EFFECTS; MICROWAVES; RESONATORS; SAPPHIRE; THIN FILMS;

HYBRID PHYSICAL-CHEMICAL VAPOR DEPOSITION (HPCVD); MGB2; PENETRATION DEPTH; SURFACE RESISTANCE;

MAGNESIUM COMPOUNDS;

EID: 19944427038     PISSN: 09532048     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-2048/18/1/L01     Document Type: Article

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