SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 8-11, 2005, Pages

Anneal-induced degradation of amorphous selenium characterized by photoconductivity measurements

(9) Saito, Ichitaro a,b Oonuki, Kousuke c Yamada, Takatoshi d Aono, Masami e Butler, Tim a Rupesinghe, Nalin L a Amaratunga, Gehan A J a Milne, William I a Okano, Ken a,b

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b INTERNATIONAL CHRISTIAN UNIVERSITY (Japan)

c UNIVERSITY OF TOKYO (Japan)

d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

e NATIONAL DEFENSE ACADEMY (Japan)

Author keywords

Amorphous arsenic selenide; Amorphous selenium; Amorphous semiconductors; Crystallization; Photoconductivity; Photodetector

Indexed keywords

AMORPHOUS ALLOYS; ANNEALING; ARSENIC; CHARGE COUPLED DEVICES; CRYSTALLIZATION; DEGRADATION; ELECTRIC CURRENTS; IMAGE QUALITY; LIGHT SOURCES; PHOTOCONDUCTIVITY; PHOTODETECTORS; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS;

AMORPHOUS ARSENIC SELENIDE; AMORPHOUS SELENIUM; AMORPHOUS SEMICONDUCTORS; ANNEAL-INDUCED DEGRADATION;

SELENIUM;

EID: 19944423846 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.L334 Document Type: Article

Times cited : (12)

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