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Journal of Crystal Growth

Volumn 280, Issue 1-2, 2005, Pages 168-172

Crystal chemistry of the epitaxy of cristobalite (SiO2) on basal plane sapphire

(3) Jewhurst, Scott A a Andeen, David a Lange, F F a

a University of California (United States)

Author keywords

A1. Crystal chemistry; A3. Chemical solution deposition; A3. Epitaxy; A3. Thin film; B1. Cristobalite; B1. Sapphire

Indexed keywords

CHARGED PARTICLES; CONCENTRATION (PROCESS); CRYSTAL STRUCTURE; CRYSTALLIZATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); POLYCRYSTALLINE MATERIALS; SILICA; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

BASAL PLANE SAPPHIRE; CHEMICAL SOLUTION DEPOSITION; CRISTOBALITE; CRYSTAL CHEMISTRY;

SAPPHIRE;

EID: 19944400106 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.03.031 Document Type: Article

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.