Strong green emission from α-SiAlON activated by divalent ytterbium under blue light irradiation

Journal of Physical Chemistry B

Volumn 109, Issue 19, 2005, Pages 9490-9494

  Xie, Rong Jun ^a   Hirosaki, N ^a   Mitomo, M ^a   Uheda, K ^b   Suehiro, T ^a   Xu, X ^a   Yamamoto, Y ^a   Sekiguchi, T ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b TOKYO UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GROUND STATE; LIGHT ABSORPTION; LIGHT EMITTING DIODES; LUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SILICON COMPOUNDS;

ELECTRONIC TRANSITIONS; GREEN EMISSION; NEPHELAUXETIC EFFECT; ROOM TEMPERATURE;

YTTERBIUM;

EID: 19944398778     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp050580s     Document Type: Article

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